Littelfuse, Inc., an industrial know-how manufacturing firm empowering a sustainable, related, and safer world, is happy to announce the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This modern driver is particularly designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial purposes.
The important thing differentiator of the IX4352NE lies in its separate 9 A supply and sink outputs, which allow tailor-made turn-on and turn-off timing whereas minimizing switching losses. An inside unfavorable cost regulator additionally offers a user-selectable unfavorable gate drive bias for improved dV/dt immunity and quicker turn-off. With an working voltage vary (V DD – V SS ) of as much as 35 V, this driver gives distinctive flexibility and efficiency.
One of many standout options of the IX4352NE is its inside unfavorable cost pump regulator, which eliminates the necessity for an exterior auxiliary energy provide or DC/DC converter. This characteristic is especially invaluable for turning off SiC MOSFETs, saving invaluable house usually required for exterior logic stage translator circuitry. The logic enter’s compatibility with normal TTL or CMOS logic ranges additional enhances space-saving capabilities.
The IX4352NE is ideally suited to driving SiC MOSFETs in varied industrial purposes corresponding to:
- on-board and off-board chargers,
- Energy Issue Correction (PFC),
- DC/DC converters,
- motor controllers, and
- industrial energy inverters.
Its superior efficiency makes it splendid for demanding energy electronics purposes within the electrical automobile, industrial, alternate vitality, sensible house, and constructing automation markets.
With its complete options, the IX4352NE simplifies circuit design and gives the next stage of integration. Constructed-in safety options corresponding to desaturation detection (DESAT) with delicate shutdown sink driver, Beneath Voltage Lockout (UVLO), and thermal shutdown (TSD) make sure the safety of the facility system and the gate driver. The built-in open-drain FAULT output indicators a fault situation to the microcontroller, enhancing security and reliability. Moreover, the IX4352NE saves invaluable PCB house and will increase circuit density, contributing to total system effectivity.
Notable enhancements over the prevailing IX4351NE embody:
- A protected DESAT-initiated delicate turn-off.
- A thermal shutdown with excessive threshold accuracy.
- The cost pump’s potential to function throughout thermal shutdown.
The brand new IX4352NE is pin-compatible, permitting for a seamless drop-in alternative in designs that specify the prevailing Littelfuse IX4351NE, which was launched in 2020.
“The IX4352NE extends our broad vary of low-side gate drivers with a brand new 9 A sink/supply driver, simplifying the gate drive circuitry wanted for SiC MOSFETs,” commented June Zhang, Product Supervisor, Built-in Circuits Division (SBU) at Littelfuse. “Its varied built-in safety options and built-in cost pump present an adjustable unfavorable gate drive voltage for improved dV/dt immunity and quicker turn-off. In consequence, it may be used to drive any SiC MOSFET or energy IGBT, whether or not it’s a Littelfuse system or another related part out there available on the market.”