Gate driver duo optimizes GaN FET design



A two-chip set from Allegro delivers remoted gate drive for e-mode GaN FETs in a number of purposes and topologies. Comprising the AHV85000 and AHV85040, the pair of ICs is the third product within the firm’s high-voltage Energy-Via portfolio, transmitting each the PWM sign and bias energy by a single exterior isolation transformer. This eliminates the necessity for an exterior auxiliary bias provide or high-side bootstrap.

Increasing on Allegro’s Energy-Via expertise, the combo chipset affords the identical advantages present in its present gate drivers, however relocates the isolation transformer from inner to exterior. By doing so, the AHV85000 and AHV85040 afford higher design flexibility for isolation, energy, and format, as engineers can select a transformer based mostly on their design necessities. They’re well-suited to be used in clear vitality purposes, resembling photo voltaic inverters and EV charging, in addition to information middle energy provides.

The AHV85000 and AHV85040 kind the primary-side transmitter and secondary-side receiver of an remoted GaN FET gate driver. Collectively, they simplify system design and cut back EMI by lowered whole common-mode capacitance. The chipset additionally permits the driving of a floating swap at any location in a switching energy topology.

The AHV85000 and AHV85040 are bought as a two-chip set. Every chip is available in a 3×3-mm, 10-pin DFN surface-mount package deal. The elements can be found by Allegro’s distributor community.

AHV85000/40 product web page

Allegro Microsystems 

Discover extra datasheets on merchandise like this one at Datasheets.com, searchable by class, half #, description, producer, and extra.

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