Littelfuse p-channel energy MOSFETs, though much less famend than their extensively used n-channel counterparts, have historically served a restricted vary of functions. Nevertheless, with the rising demand for low-voltage (LV) functions, the scope of p-channel energy MOSFETs has been expanded. The simplicity of making use of Littelfuse p-channel options for high-side (HS) functions makes them extra engaging for LV inverters (< 120 V) and non-isolated point-of-load options. The convenience of driving an HS p-channel MOSFET with out the necessity for a cost pump or extra voltage supply ends in simplified deÂsignal, house financial savings, lowered half rely and price effectivity.
This text makes a primary comparability of n-channel and p-channel energy MOSFETs, introduces Littelfuse’s p-channel energy MOSFETs, after which explores their goal functions.
A comparative evaluation of n-channel and p-channel energy MOSFETs
To realize the identical on-state resistance RDS(on) because the n-channel sort MOSFET, the p-channel requires a 2 to 3-times bigger die dimension. Due to this fact, in high-current functions, the place low conduction losses are essential, massive die p-channel MOSFETs with very low RDS(on) are suboptimal. Whereas the bigger chip dimension of the p-channel machine provides improved thermal efficiency, it reveals bigger intrinsic capacitances and thus greater switching losses. This downside considerably impacts general system value, effectivity, and thermal administration when the system operates at a excessive switching frequency.
In low-frequency functions with vital conduction losses, a p-channel MOSFET ought to match the RDS(on) of an n-channel MOSFET, requiring a bigger chip space. Conversely, in high-frequency functions prioritizing switching losses, a p-channel MOSFET ought to align with the full gate expenses of an n-channel counterpart, usually having the same chip dimension however a decrease present ranking. Due to this fact, choosing the proper p-channel MOSFET calls for cautious consideration of machine RDS(on) and gate cost (Qg) specs together with the thermal efficiency.
Littelfuse p-channel energy MOSFETs
Littelfuse provides a variety of business certified p-channel energy MOSFETs with the very best voltage class, lowest RDS(on) and Qg, excessive avalanche vitality ranking, wonderful switching efficiency and superior protected working space (SOA) with best-in-class efficiency in each commonplace industrial and distinctive remoted packages. Littelfuse p-channel energy MOSFETs retain the important options of comparable n-channel energy MOSFETs comparable to quick switching, environment friendly gate-voltage management, and wonderful temperature stability.
Fig. 2 presents the important thing highlights of p-channel energy MOSFETs supplied by Littelfuse. Customary P and PolarP™ planar units can be found with voltage rankings from -100 V to -600 V and present rankings from -2 A to -170 A. PolarP™ provides optimized cell construction with low area-specific on-state resistance and improved switching efficiency, whereas Customary P advantages from a greater SOA efficiency. Trench P using a extra dense trench gate cell construction provides very low RDS(on), low gate cost, quick physique diode and sooner switching with machine voltages starting from -50 V to -200 V and currents from -10 A to -210 A. The newest addition to the portfolio is IXTY2P50PA (-500 V, -2 A, 4.2 Ω) which is Littelfuse’s first automotive grade p-channel energy MOSFET for automotive functions.
Functions for Littelfuse p-channel energy MOSFETs
N-channel MOSFETs are usually used within the energy stage in typical half-bridge (HB) functions, . Nevertheless, n-channel HS switches necessitate a bootstrap circuit to generate a gate voltage that’s floating with regards to the supply of the HS MOSFET or an remoted energy provide to activate as proven in Fig. 3a). Therefore, the benefit of utilizing n-channel units comes at the price of elevated complexity in gate driver design resulting in extra design effort and larger house utilization. Fig. 3 illustrates the distinction between circuits utilizing complementary MOSFETs and people utilizing n-channel MOSFETs. When a p-channel MOSFET is used because the HS swap on this configuration as depicted in Fig. 3b), it will possibly drastically simplify the motive force design. A cost pump that drives the HS swap may very well be eliminated and the p-channel MOSFET may be simply managed by the MCU by a easy stage shifter. This reduces design effort and half quantity rely leading to a cost-efficient design that makes use of house effectively.
Reverse polarity safety
Reverse polarity safety is a security measure inside programs to forestall potential fireplace hazards and damages attributable to a reverse connection of the ability supply. Fig. 4a) reveals the reverse polarity safety applied utilizing a p-channel energy MOSFET. When the battery is appropriately linked, the intrinsic physique diode conducts till the MOSFET channel is activated. Within the occasion of a reverse connection of the battery, the physique diode is reverse-biased, with the gate and supply on the identical potential, thereby turning off the p-channel MOSFET. A Zener diode clamps the gate voltage of the p-channel MOSFET, defending it in case of excessively excessive voltage ranges.
Load swap
Load switches join or disconnect a voltage rail to a particular load providing a cheap and easy method for a system to effectively handle energy. Fig. 4b) demonstrates a circuit utilizing a p-channel energy MOSFET for a load swap. This circuit is pushed by a logic allow (EN) sign controlling the p-channel load swap by way of a small-signal n-channel MOSFET Q1. When EN is low, Q1 is off, and the p-channel gate is pulled as much as VBAT. Conversely, when EN is excessive, Q1 prompts, grounding the p-channel gate, and turning on the load swap. If VBAT exceeds the p-channel MOSFET’s threshold voltage, it will possibly activate when EN is excessive, eliminating the necessity for an extra voltage supply to bias the gate, which is important for n-channel MOSFETs. The sequence resistor is required to restrict the present and a Zener Diode to clamp the gate voltage to a most worth.
DC-DC converters
Conclusion
With the event of contemporary LV functions, Littelfuse’s p-channel energy MOSFETs show their versatility in assembly the evolving wants of in the present day’s energy electronics. Using Littelfuse’s complete vary of p-channel MOSFETs gives designers with benefits comparable to simplified, extra dependable, and optimized circuit design in industrial and automotive functions. To realize optimum efficiency for particular functions, designers should assess the trade-off between RDS(on) and Qg when deciding on a p-channel energy MOSFET.
Writer: Sachin Shridhar Paradkar, Littelfuse