Vishay Intertechnology Launches Revolutionary Half-Bridge IGBT Energy Modules


Vishay Intertechnology, Inc. has unveiled a groundbreaking line of 5 new half-bridge IGBT energy modules, housed within the newly redesigned INT-A-PAK bundle. These modules, particularly the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N, are constructed on Vishay’s cutting-edge Trench IGBT expertise. They provide designers a alternative between two applied sciences — low VCE(ON) or low Eoff — to mitigate conduction or switching losses in high-current inverter phases for transportation, power, and {industry} functions.

These half-bridge gadgets are a fusion of Trench IGBTs and Gen IV FRED Pt anti-parallel diodes, that includes tender reverse restoration traits. The modules’ INT-A-PAK bundle now boasts a brand new gate pin orientation, guaranteeing compatibility with the 34 mm industry-standard bundle and facilitating mechanical drop-in replacements.

The modules discover functions in varied fields, together with energy provide inverters for railway tools, power technology, distribution, storage techniques, welding tools, motor drives, and robotics. Particularly designed for lowering conduction losses in output phases for TIG welding machines, these gadgets supply a collector-to-emitter voltage of ≤ 1.07 V at +125 °C and rated present. For prime-frequency energy functions, the opposite variants boast low switching losses, with Eoff all the way down to 1.0 mJ at +125 °C and rated present.

Key options of the VS-GT100TS065S embrace:

  • VCES: 650 V
  • Steady Collector Present (IC DC), TC = 80 °C: 185A
  • VCE(on) at 100 A, 25 °C: 1.05 V
  • Chip Degree VCE(on) at 100 A, 25 °C: 0.98 V
  • Velocity: DC to 1 kHz
  • Bundle: INT-A-PAK
  • Circuit Configuration: Half-bridge

These modules supply a 650 V collector-to-emitter voltage, steady collector present starting from 100 A to 200 A, and low junction-to-case thermal resistance. UL-approved file E78996 might be straight mounted to heatsinks and supply low EMI to decrease snubbing necessities.

Introducing these superior half-bridge IGBT energy modules marks a major development within the subject, promising enhanced effectivity and efficiency throughout varied industrial sectors.

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